Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Autor:	Tai Li, Liang Zhao, Guoqiang Lv, Wenhui Ma, Mengyu Zhang, Zhenling Huang
Rok vydání:	2022
Předmět:	Electronic Optical and Magnetic Materials
Zdroj:	Silicon. 15:1049-1062
ISSN:	1876-9918 1876-990X
DOI:	10.1007/s12633-022-02059-x
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12abca32924603aed0421152f6a2e063 https://doi.org/10.1007/s12633-022-02059-x Zobrazit plný text záznamu Full text from SpringerLink