Experimental research on the sensitivity and noise level of bipolar and CMOS integrated magnetotransistors and judgement of their applicability in weak-field magnetometers
| Autor: | A.I. Galushkov, Yu. A. Chaplygin, S.I. Volkov, I. M. Romanov |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Physics
Magnetometer business.industry Bipolar junction transistor Metals and Alloys Electrical engineering Integrated circuit Condensed Matter Physics Noise (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Magnetic field CMOS law Optoelectronics Electrical and Electronic Engineering Center frequency business Instrumentation Sensitivity (electronics) |
| Zdroj: | Sensors and Actuators A: Physical. 49:163-166 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/0924-4247(95)01028-9 |
| Popis: | Experimental investigations of the sensitivity and level of inherent noise of CMOS and bipolar magnetic sensors at temperatures of 300 and 77 K have been carried out. The absolute sensitivities of CMOS sensors are 4 and 20 V T-1 at temperatures of 300 and 77 K, respectively, while the equivalent noise fields at the central frequency of 1 kHz are 7 μT Hz−12 at 300 K and 1.5 μT Hz−12 at 77 K. The absolute sensitivities of bipolar two-collector magnetotransistor (BTMT) sensors are 1.2 and 30 V T−1 at temperatures of 300 and 77 K, respectively, while the equivalent noise fields at the central frequency of 1 kHz are 2 μT Hz−12 at 300 K and 100 nT Hz−12 at 77 K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect