Sn-Background-Induced Diffusion Enhancement of Sb in Si

Autor:	Margareta Linnarsson, Jacob Fage-Pedersen, John Lundsgaard Hansen, Arne Nylandsted Larsen, Peter I. Gaiduk
Rok vydání:	1998
Předmět:	Materials science Condensed matter physics Impurity Precipitation (chemistry) Chemical physics General Physics and Astronomy Diffusion (business)
Zdroj:	Physical Review Letters. 81:5856-5859
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.81.5856
Popis:	The diffusion of Sb in Si has been studied as a function of Sn-background concentration, and enhanced Sb diffusion is observed for backgrounds higher than CSn1 = 5 A— 1019 cm-3. This concentration for the onset of enhanced diffusion is significantly lower than in other reports of high-concentration vacancy-mediated diffusion in Si. These reports, however, have up to now been concerned with donor impurities, whereas Sn is an electrically neutral impurity. Some Sn precipitation occurred, and the influence upon the diffusion is estimated from experiment to be small. A number of proposed models of high-concentration diffusion are discussed on the basis of the data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12a4eeffda786ce06f7fa369c744e6c7 https://doi.org/10.1103/physrevlett.81.5856 Zobrazit plný text záznamu