Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P
| Autor: | Wolfgang Stolz, Andreas K. Schaper, Jiechao Jiang, Z. Spika |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 88:3341-3348 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | In contrast to the continuous metalorganic vapor phase epitaxy of (GaIn)P, a modulated growth process yields higher degrees of superlattice ordering along with a more complex domain hierarchy. Using cross-sectional as well as plan view transmission electron microscopy, we have studied the two-dimensional contrast modulation which occurs at a deposition cycle of 1 monolayer (ML) GaP/1 ML InP. The interlocking modulation waves create a columnar domain morphology coexisting with an antiphase domain structure. The lateral size of the domain columns ranges from 25 to 50 nm depending on the misorientation of the GaAs substrate. Dark-field imaging and atomic force microscopy investigations provided clear evidence of stress relief involved in the domain formation. At zero off cut, complementary single ordering variant superdomains are formed in parallel with faceting of the growth front. The 4°–6° B facets appear the energetically more stable growth planes compared to the exact (001) crystallographic plane. |
| Databáze: | OpenAIRE |
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