Extremely Low-Voltage Bulk-Driven Tunable Transconductor
| Autor: | Fabian Khateb, Spyridon Vlassis, Tomasz Kulej |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Engineering
business.industry Applied Mathematics Transconductance 020208 electrical & electronic engineering Bandwidth (signal processing) Electrical engineering 020206 networking & telecommunications Biasing 02 engineering and technology CMOS Current consumption Robustness (computer science) Signal Processing 0202 electrical engineering electronic engineering information engineering business Cmos process Low voltage |
| Zdroj: | Circuits, Systems, and Signal Processing. 36:511-524 |
| ISSN: | 1531-5878 0278-081X |
| Popis: | A design solution for bulk-driven tunable transconductor capable of working under extremely low supply/consumption with rail-to-rail input common-mode range is presented in this work. The proposed transconductor topology consists of six bulk-driven CMOS inverters, and it uses a very simple biasing circuit for the transconductance tuning. The design robustness was verified for 0.5 and 0.25 V power supplies offering the advantages of the current-controlled input transconductance. For 0.5 V power supply, the proposed transconductor has 0.075---10.2 $$\upmu \hbox {S}$$μS transconductance tuning range, input-referred intercept point IP3 = 1.81 V, and 4.62 MHz bandwidth for 3 $$\upmu \hbox {A}$$μA current consumption. The design robustness of the tunable transconductor was verified by means of computer simulation using triple-well 0.18 $$\upmu \hbox {m}$$μm CMOS process. |
| Databáze: | OpenAIRE |
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