| Autor: |
D. Jung, Y. Zhou, X. Hao, Z. Wang, Y. Huai, J. Zhang, Kimihiro Satoh |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 IEEE Magnetics Conference (INTERMAG). |
| DOI: |
10.1109/intmag.2015.7157689 |
| Popis: |
Traditional spin transfer torque MRAM (STT-MRAM) uses one transistor and one MTJ (1T-1MTJ) architecture, where the transistor provides bi-polar currents to switch the magnetization of the free layer of the MTJ. Due to the limitation of the maximum current that is available from a typical transistor, for a MTJ device with required thermal stability and data retention at extreme densities, the size of the transistor that is needed to provide a high enough current to switch the magnetization of the free layer of the MTJ may impose an ultimate limitation on the STT-MRAM area data density that can be achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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