Autor: |
T.H. Hsu, Y.K. Fang, Shou-Gwo Wuu, Chih-Wei Lin, Cheng-I Lin, Ho-Ching Chien, C.S. Wang, S.F. Chen, Jeng-Shyan Lin, Dun-Nian Yaung, Chien-Hsien Tseng |
Rok vydání: |
2004 |
Předmět: |
|
Zdroj: |
IEEE Electron Device Letters. 25:375-377 |
ISSN: |
0741-3106 |
DOI: |
10.1109/led.2004.828995 |
Popis: |
A dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-/spl mu/m technology. Based on refraction index (RI) differences between dielectric films (RI = 1.4 /spl sim/ 1.6) and air gap (RI = 1), total internal reflection occurred at dielectric-film/air-gap interface, thus the incident light is concentrated in selected pixel. Excellent optical performances have been demonstrated in 3.0 /spl times/ 3.0 /spl mu/m pixel. Optical spatial crosstalk achieves 80% reduction at 20/spl deg/ incidence angle and significantly alleviates the pixel sensitivity degradation with larger angle of incident light. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|