Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Autor:	Srikar Jandhyala, Jiyoung Kim, B. M. Armstrong, Robert M. Wallace, Hong Dong, Durga Gajula, B. E. Coss, David McNeill
Rok vydání:	2012
Předmět:	Materials science Fabrication Physics and Astronomy (miscellaneous) business.industry Metallurgy chemistry.chemical_element Schottky diode Germanium Germanide chemistry.chemical_compound Nickel chemistry Phase (matter) MOSFET Optoelectronics Field-effect transistor business
Zdroj:	Applied Physics Letters. 100:192101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4712564
Popis:	In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300 °C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is ∼300 °C, where the nickel mono-germanide phase is formed but without phase agglomeration.
Databáze:	OpenAIRE
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