Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
| Autor: | M. B. Karavaev, T. B. Popova, Maria V. Zamoryanskaya, Demid A. Kirilenko, I. V. Sedova, A. A. Sitnikova, E. V. Ivanova |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nanostructure business.industry Chemistry Band gap Cathodoluminescence Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Microanalysis Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor 0103 physical sciences Microscopy Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Semiconductors. 51:54-60 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and geometrical parameters of the nanoscale ZnCdSe layer. The accuracy of the results is verified by transmission electron microscopy. The research techniques are based on the possibility of varying the primary electron-beam energy, which results in changes in the regions of characteristic X-ray and cathodoluminescence generation. |
| Databáze: | OpenAIRE |
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