| Autor: |
Miyuki Uomoto, Fengwen Mu, Haruo Nakazawa, Kenichi Iguchi, Takehito Shimatsu, Tadatomo Suga |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). |
| DOI: |
10.23919/ltb-3d.2019.8735291 |
| Popis: |
A SiC-SiC temporary bonding compatible with rapid thermal annealing at $\sim 1000^{\circ } \mathrm{C}$ has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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