Chemical modification of charge transport in silicon backbone polymers
| Autor: | Frederick E. Knier, Kathleen M. McGrane, Martin A. Abkowitz, Ronald J. Weagley, Milan Stolka |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
chemistry.chemical_classification
Materials science Silicon Field (physics) Dopant Mechanical Engineering Metals and Alloys Analytical chemistry chemistry.chemical_element Chemical modification Charge (physics) Polymer Time of flight technique Condensed Matter Physics Electronic Optical and Magnetic Materials Pulse (physics) chemistry Mechanics of Materials Chemical physics Materials Chemistry |
| Zdroj: | Synthetic Metals. 28:553-558 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/0379-6779(89)90573-0 |
| Popis: | Charge transport in highly insulating Si backbone polymers has been studied by the Time Of Flight technique. Transit pulse shapes and the field and temperature dependence of the hole drift mobility (for many systems about 10 −4 cm 2 /Vs at 295K and E = 10 5 V/cm) have been characterized for a prototypical example, poly(methylphenylsilylene), PMPS. The effect of dopants, which differ in their relative oxidation potentials, on the drift mobility and the transit pulse shape have also been studied. Comparison of the overall results with other glassy polymeric media suggest that transport proceeds by hopping among chain backbone derived domain like segments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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