Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition
| Autor: | Malcolm S. Carroll, Erica A. Douglas, Jason C. Verley, Josephine J. Sheng |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Argon Silicon business.industry Process Chemistry and Technology chemistry.chemical_element Germanium Chemical vapor deposition Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Germane Materials Chemistry Optoelectronics Deposition (phase transition) Electrical and Electronic Engineering business Instrumentation Plasma processing |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:041202 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.4921590 |
| Popis: | Demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. This work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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