Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Autor:	Bin Liu, Ying Shi, Jharna Chaudhuri, J. Chaudhuri, James H. Edgar, L. Liu, John G Swadener, Harry M. Meyer, E. A. Payzant, Larry R Walker, N. D. Evans
Rok vydání:	2001
Předmět:	Novel technique Materials science Nucleation Condensed Matter Physics Synchrotron Electronic Optical and Magnetic Materials law.invention Crystallography Cracking law Sic substrate Sublimation (phase transition) Composite material Single crystal
Zdroj:	physica status solidi (a). 188:757-762
ISSN:	1521-396X 0031-8965
Popis:	Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12610c819527b9647145df9688e9d8ec https://doi.org/10.1002/1521-396x(200112)188:2<757::aid-pssa757>3.0.co Zobrazit plný text záznamu Plný text