GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION
| Autor: | Fukai Shan, G. X. Liu, Hong-Seung Kim, Won-Jae Lee, Byoung-Chul Shin, C. R. Cho, S. C. Kim |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
genetic structures Band gap Layer by layer Analytical chemistry Combustion chemical vapor deposition Condensed Matter Physics eye diseases Electronic Optical and Magnetic Materials Atomic layer deposition Carbon film Control and Systems Engineering Materials Chemistry Ceramics and Composites Atomic layer epitaxy Electrical and Electronic Engineering Thin film Diffractometer |
| Zdroj: | Integrated Ferroelectrics. 94:11-20 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584580701755716 |
| Popis: | In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga2O3 thin films at various temperatures (50, 150, and 250°C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH3)2GaNH2]3, and oxygen plasma of 150 W. The growth temperature dependences of the Ga2O3 thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga2O3/Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated. |
| Databáze: | OpenAIRE |
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