Characterization of Si/Ge interfaces by diffuse X-ray scattering in the region of total external reflection
| Autor: | Roger Pynn, J.-P. Schlomka, O. H. Seeck, Metin Tolan, Michael R. Fitzsimmons, J. Stettner, Werner Press |
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| Rok vydání: | 1996 |
| Předmět: |
Mesoscopic physics
Materials science business.industry Scattering Ultra-high vacuum Surface finish Chemical vapor deposition Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Amplitude Optics Total external reflection Electrical and Electronic Engineering Born approximation business |
| Zdroj: | Physica B: Condensed Matter. 221:44-52 |
| ISSN: | 0921-4526 |
| Popis: | Four samples with different numbers of Si/Ge-bilayers were grown at the same time by high vacuum vapor deposition onto Si(111)-substrates at room temperature. Diffuse scattering experiments within the region of total external reflection were carried out to investigate the mesoscopic roughness of the interfaces. The data are explained quantitatively using the distorted wave Born approximation (DWBA) for correlated layer systems with self-affine interfaces. Because all samples were grown under identical conditions the interface parameters of the simpler systems were used for the more complex samples in order to reduce the number of free parameters in the refinement. The resulting trends for the roughness amplitude and the in-plane correlation lengths are compared to predictions from different growth models. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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