A Closed-Form Transient Joule Heating Model for an Interconnect in an Integrated Circuit
| Autor: | Woojin Ahn, Patrick Justison, Tian Shen, Haojun Zhang, Muhammad A. Alam |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Interconnection Degree (graph theory) Mathematical analysis Context (language use) Integrated circuit 01 natural sciences Finite element method Electronic Optical and Magnetic Materials law.invention Duty cycle law 0103 physical sciences Transient (oscillation) Electrical and Electronic Engineering Joule heating |
| Zdroj: | IEEE Electron Device Letters. 41:288-291 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2019.2960060 |
| Popis: | Front and back ends of line (FEOL and BEOL) self-heating and mutual heating are important barriers to a sustained increase in processor speed and density. In this context, the severity of transient Joule heating in scaled interconnects under a variety of operating conditions (e.g., frequency and duty cycle) is not fully understood. Here we introduce the closed-form analytical transient Joule heating model to calculate the time-dependent temperature rise of an interconnect ( $\Delta {T}_{\textsf {Int}}({t})$ ) located at an arbitrary metal level within an integrated circuit (IC). The model is validated by high-fidelity finite element method simulations and specially designed test structures. Remarkably, the model predicts ${I}_{\textsf {Max}}$ (the interconnect-specific current for a certain degree of $\Delta {T}_{\textsf {Int}}$ ) within 20%–25% for an arbitrary duty cycle. Therefore, our model can be used to accurately predict temperature-accelerated interconnect reliability issues of a modern IC. |
| Databáze: | OpenAIRE |
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