Effect of Cu damascene metallization on gate SiO/sub 2/ plasma damage

Autor: M.Y. Hao, Geoffrey Choh-Fei Yeap, S. Chen, D.S. Bang, Q. Xiang, M.R. Lin
Rok vydání: 2002
Předmět:
Zdroj: 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).
Popis: The effect of using a Cu damascene process on plasma process-induced damage (PPID) is studied in relationship to future scaling rules. Wafers processed using a Cu damascene metallization scheme show little increase in gate leakage as antenna ratios are increased. This is in contrast to conventional Al wafers, which show a significant increase in gate leakage as the antenna ratio is increased. Applying this result to future technology generations shows that wafers produced with a Cu damascene process have the potential to exhibit significantly less gate leakage for future technology generations.
Databáze: OpenAIRE