| Autor: |
R.J. Zaman, C.R. Cleavelin, Ken Matthews, M. Gostkowski, Jean-Pierre Colinge, Shaofeng Yu, Tsu-Jae King, P. Patruno, C. Maleville, M. F. Pas, Weize Xiong, Rick L. Wise |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573). |
| DOI: |
10.1109/soi.2004.1391613 |
| Popis: |
Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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