Influence of the deposition parameters on the chemical composition of reactively rf sputtered TiO2 on Si
| Autor: | J. Koprinarova, D. Todorov, P. Alexandrov |
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| Rok vydání: | 1997 |
| Předmět: |
Range (particle radiation)
Thin layers Materials science Intermediate layer Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Cavity magnetron Chemical composition Deposition (law) |
| Zdroj: | Applied Surface Science. 115:128-134 |
| ISSN: | 0169-4332 |
| Popis: | The influence of the reactive gas mixture and substrate temperature on the chemical composition of reactively rf magnetron sputtered TiO2 thin layers on Si substrates has been studied. A detailed investigation has been made of the transition layer between Si and TiO2. The composition of the films and the interface with the substrate were analyzed by X-ray photoelectron spectroscopy (XPS). It was shown that in the range of O2 contents (0.3–50%) and the substrate temperature used (room temperature-300°C), the layers always consisted of TiO2 and no evidence of Ti suboxides or non oxidized Ti was found. The composition of the TiO2-Si interface region was found to depend on the deposition parameters. A SiO2 intermediate layer between Si and TiO2 was found to exist in all cases and its thickness to increase when increasing the O2 contents and the substrate temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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