Influence of the bismuth deficit on the structural and electric properties of the Bi2Sr2CaCu2Oy thin films synthesized by molecular beam epitaxy
| Autor: | H. El Alami, C. Deville Cavellin, I Rannou |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Reflection high-energy electron diffraction
Materials science Scattering Analytical chemistry Energy Engineering and Power Technology chemistry.chemical_element Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials Bismuth Electron diffraction chemistry Percolation Electrical and Electronic Engineering Thin film Molecular beam epitaxy |
| Zdroj: | Physica C: Superconductivity. 406:131-136 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/j.physc.2004.03.247 |
| Popis: | BiSrCaCuO thin films were grown on (1 0 0) SrTiO3 substrates by molecular beam epitaxy (MBE) with variation of the Bi deposition time. A new 2x212 family with x varied between 1 and 0 was grown. The X-ray study, the Rutherford back scattering (RBS), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) were used to characterize the films. It was shown that the growth method used leads to intergrowth nanostructures. The transport measurements of BiSrCaCuO thin films were performed. The results analysed using the theory of percolation show a 2D character of conductivity in the films studied. |
| Databáze: | OpenAIRE |
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