| Autor: |
W. Hafez, F.P. Klemens, R. Cirelli, J.F. Miner, E. Ferry, V. Dimitrov, William M. Mansfield, T.W. Sorsch, R. Chan, Jiunn B. Heng, Gregory Timp, O. Dimauro, J. Feng, K. Timp, A. Kornblit, Milton Feng, J.E. Bower, A. Taylor |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.. |
| DOI: |
10.1109/iedm.2005.1609307 |
| Popis: |
We have fabricated and tested sub-50nm gate length nMOSFETs with fT up to 290GHz to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. We have also developed an accurate, high frequency (1 -50GHz) model suitable for integration with digital CMOS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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