SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors
| Autor: | Tatsuo Hasegawa, Keisuke Aoshima, Jun'ya Tsutsumi, Hiromi Minemawari, Shunto Arai, Gyo Kitahara |
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| Rok vydání: | 2018 |
| Předmět: |
0301 basic medicine
Materials science business.industry Mechanical Engineering Gate dielectric Transistor Condensed Matter Physics law.invention Pentacene 03 medical and health sciences chemistry.chemical_compound 030104 developmental biology chemistry Mechanics of Materials Thin-film transistor law Electrode Surface modification Optoelectronics General Materials Science business Layer (electronics) Low voltage |
| Zdroj: | MRS Advances. 3:2931-2936 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2018.423 |
| Popis: | Recently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes. |
| Databáze: | OpenAIRE |
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