4.5 kV 3000 A high power reverse conducting gate turn-off thyristor

Autor:	O. Yamada, O. Hashimoto, H. Kirihata, Y. Takahashi, M. Watanabe
Rok vydání:	2003
Předmět:	Gate turn-off thyristor Engineering Emitter turn off thyristor business.industry Electrical engineering Thyristor MOS-controlled thyristor Anode law.invention Integrated gate-commutated thyristor Static induction thyristor law business Diode
Zdroj:	PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference.
DOI:	10.1109/pesc.1988.18225
Popis:	A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anode shorting and the n/sup +/ buffer concentration. The electrical characteristics of the device, which achieves 4.5 kV blocking voltage, 3000 A turn-off current and low switching loss are reported. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1200bffe3c7658fa4c6922b44d66311e https://doi.org/10.1109/pesc.1988.18225 Zobrazit plný text záznamu