Analysis of DC and RF performance of Al 0. 31 Ga 0 . 69 N /Al 0. 1 Ga 0 . 9 N / β‐Ga 2 O 3 double quantum well HEMT on silicon carbide substrate

Autor:	Sivamani Chinnaswamy, Rajeswari Manickam, Vijikala Vincent, Sujatha Thankaraj
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Computer Graphics and Computer-Aided Design Computer Science Applications
Zdroj:	International Journal of RF and Microwave Computer-Aided Engineering. 32
ISSN:	1099-047X 1096-4290
DOI:	10.1002/mmce.23141
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::11fe60d32fa41aa3805303d880b081c2 https://doi.org/10.1002/mmce.23141 Zobrazit plný text záznamu