The importance of using dual channel heterostructure in strained P-MOSFETs
| Autor: | Amine Mohammed Taberkit, Mohamed Horch, Ahlam Guen-Bouazza |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Electron mobility
Silicon business.industry Computer science Transconductance 05 social sciences Transistor chemistry.chemical_element 050801 communication & media studies Heterojunction Capacitance law.invention 0508 media and communications chemistry law Logic gate 0502 economics and business MOSFET Optoelectronics 050211 marketing business |
| Zdroj: | 2018 International Conference on Communications and Electrical Engineering (ICCEE). |
| DOI: | 10.1109/ccee.2018.8634492 |
| Popis: | We present in this work a dual channel heterostructure strained structure, introduce the high carrier mobility Awaited in heterostructure devices while using several models which are: CVT, SHIRAHATA and WATT, we present a two dimensional simulation of dual strained channel heterostructure P-MOSFETs. This study is accomplished using SILVACO-TCAD simulation software, the comparison of the effect of using strain technique on P-MOSFET transistors will demonstrate the importance of using strain technique especially in dual channel heterostructure MOSFET. The simulation of fabrication steps and the extraction of the electronic proprieties in terms of transfer and output characteristics, transconductance, and the quasi-static capacitance allow understanding and interpreting these enhancements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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