Optoelectronic devices by gas source molecular beam epitaxy

Autor:	Jean-Yves Emery, Leon Goldstein, M. Lambert, Fabienne Gaborit, Dominique Bonnevie, Francis Poingt, Christophe Starck
Rok vydání:	1992
Předmět:	Distributed feedback laser Materials science business.industry Heterojunction Dielectric Condensed Matter Physics Laser law.invention Inorganic Chemistry Optics law Materials Chemistry Optoelectronics business Current density Quantum well Coupling coefficient of resonators Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 120:157-161
ISSN:	0022-0248
DOI:	10.1016/0022-0248(92)90382-s
Popis:	Different structures for optoelectronic devices have been grown by gas source molecular beam epitaxy. Strained layer multiquantum well structures with quarternary wells exhibit low threshold current density (Jth=510 A/cm2) and high T0 value (90 K). A two step growth procedure enables the realization of the vertical structure distributed feedback laser with very good control of the coupling coefficient between laser mode and engraved gratings. Finally, the realization of a buried heterojunction laser is demonstrated in a three-step epitaxial process and a new lift-off procedure avoiding the use of a dielectric mask. Preliminary devices show power emission up to 40 mW with a threshold current Ith=60 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::11f994dafa7278043e889aaa5b35e255 https://doi.org/10.1016/0022-0248(92)90382-s Zobrazit plný text záznamu