Autor: |
I.M. Neklyudov, V.I. Bendikov, D.G. Malykhin, I. G. Marchenko, A. G. Guglya |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
Vacuum. 70:331-337 |
ISSN: |
0042-207X |
Popis: |
The paper presents the experimental and theoretical study of Cr–N films deposition by the IBAD method. The investigations were performed at various deposition rates. The ion energy was 30 keV. Computer simulation methods were used to calculate the parameters of film irradiation with nitrogen ions for obtaining homogeneous chemical composition. The electrophysical properties of films produced were investigated experimentally. It is found that in the initial stages of film deposition the electrical resistivity of films irradiated with nitrogen ions is about 200 times higher than the one in unirradiated films. As the film thickness increases, this difference falls down to a factor of 6. The X-ray diffraction and electron microscopy analysis have revealed that in the films under irradiation Cr 2 O 3 and Cr 2 N precipitates are formed. The present results are discussed in the framework of the concepts about the influence of radiation defects on the structure of resulting films. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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