A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing
| Autor: | Hao-Wei Guo, De-Kang Li, Zhi-Bo Liu, Jianguo Tian, Xi-Lin Zhang, Xiao-Kuan Li, Kai-Xuan Huang, Bin-Wei Yao, Bao-Wang Su, Xu-Dong Chen |
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| Rok vydání: | 2020 |
| Předmět: |
Photocurrent
Materials science business.industry Bipolar junction transistor Doping Transistor General Engineering Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Photodiode law.invention Nanoelectronics law Femtosecond Optoelectronics General Materials Science 0210 nano-technology business Common emitter |
| Zdroj: | Nanoscale Advances. 2:1733-1740 |
| ISSN: | 2516-0230 |
| DOI: | 10.1039/d0na00201a |
| Popis: | Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials. |
| Databáze: | OpenAIRE |
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