Co-doping effects in rare-earth-doped planar waveguides
| Autor: | J.S. Aitchison, J.R. Bonar |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Materials science Computer Networks and Communications business.industry Doping Physics::Optics chemistry.chemical_element Laser Neodymium Atomic and Molecular Physics and Optics law.invention Condensed Matter::Materials Science Optics Planar Ion implantation chemistry law Condensed Matter::Superconductivity Optoelectronics Electrical and Electronic Engineering Reactive-ion etching business Deposition (law) |
| Zdroj: | IEE Proceedings - Optoelectronics. 143:293-297 |
| ISSN: | 1359-7078 1350-2433 |
| DOI: | 10.1049/ip-opt:19960732 |
| Popis: | Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd/sup 3+/ and Er/sup 3+/ doped silica. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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