Low temperature deposited Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films on Pt electrodes by radio frequency magnetron sputtering

Autor:	Thottam S. Kalkur, Lee Kammerdiner, Elliot Philofsky, N. Cramer
Rok vydání:	2004
Předmět:	Permittivity Materials science Physics and Astronomy (miscellaneous) Annealing (metallurgy) Sputtering Analytical chemistry Relative permittivity Dissipation factor Dielectric loss Thin film Sputter deposition
Zdroj:	Applied Physics Letters. 84:771-773
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1645313
Popis:	Ba0.96Ca0.04Ti0.84Zr0.16O3 films acceptor doped with Sc were deposited on Pt/TiO2/SiO2/Si substrates using radio frequency magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 1.9% at 100 kHz. Leakage current densities of 1.6×10−8 A/cm2 were observed at 300 K with 300 kV/cm of applied electric field.
Databáze:	OpenAIRE
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