Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOxChannels via O2Plasma Treatment
| Autor: | Yarong Wang, David Wei Zhang, Yan Shao, Wen-Jun Liu, Bao Zhu, He-Mei Zheng, Qian Ma, Shi-Jin Ding |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry Annealing (metallurgy) Transistor 02 engineering and technology Plasma Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Threshold voltage Thin-film transistor law 0103 physical sciences Surface roughness Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters. 39:1672-1675 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | To improve the electrical performance of thin-film transistors with an atomic-layer-deposited Al2O3 dielectric/InOx channel, O2 plasma surface treatments of the InOx back channel are explored in comparison with thermal annealing. It is demonstrated that the O2 plasma treatment can enhance the device performance much more efficiently than thermal annealing, exhibiting an extremely low-thermal budget. Furthermore, it is revealed that the plasma treatment at a higher temperature can improve the device performance much faster than that at a lower temperature. For a 4 min O2plasma treatment at 200 °C, superior electrical characteristics are achieved, such as a field-effect mobility of 11 cm2V−1s−1, a threshold voltage of 0.9 V, a subthreshold swing of 0.38 V/dec, and good gate bias stress stabilities. This is ascribed to faster passivation of oxygen vacancies, removal of more C residues, and weaker surface damage and smaller surface roughness of the InOx back channel in comparison with long plasma treatments at lower temperatures. |
| Databáze: | OpenAIRE |
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