In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopy
| Autor: | Yoshiharu Yamauchi, Kunihiko Uwai, Naoki Kobayashi |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
In situ
Tungsten filament Analytical chemistry General Physics and Astronomy chemistry.chemical_element Infrared spectroscopy Surfaces and Interfaces General Chemistry Condensed Matter Physics Nitrogen Reflectivity Surfaces Coatings and Films Infrared reflectance spectroscopy chemistry Chemical bond Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. :412-416 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(96)00310-8 |
| Popis: | Nitridation of GaAs (001) surfaces grown by molecular beam epitaxy is observed by detecting the surface reflectance change caused by the formation of Ga-N and As-N bonds. Nitridation is performed by exposing (4 × 2) or (2 × 4) surfaces to atomic nitrogen generated with a heated tungsten filament in an As-free environment. Nitridation of the Ga-rich (4 × 2) surface results in a single reflectance peak at 1200 cm −1 attributed to the formation of Ga-N bonds, while nitridation of the As-rich (2 × 4) surface results in another peak at 1000 cm −1 attributed to As-N bonds in addition to the Ga-N peak. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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