Hot carrier reliability of RF N- LDMOS for S Band radar application
| Autor: | Karine Mourgues, J. Marcon, Mohamed Masmoudi, Pierre Bertram, Philippe Eudeline, Mohamed Ali Belaïd, M. Gares, Hichame Maanane, Clément Tolant |
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| Rok vydání: | 2006 |
| Předmět: |
LDMOS
Engineering business.industry RF power amplifier Transistor Electrical engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Impact ionization Reliability (semiconductor) law Optoelectronics S band Electrical and Electronic Engineering Radar Safety Risk Reliability and Quality business Microwave |
| Zdroj: | Microelectronics Reliability. 46:1806-1811 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2006.07.074 |
| Popis: | This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF lifetests and a complete device electric characterization has been performed. A whole review of its critical electrical parameters after accelerated ageing tests is proposed and discussed. This study tend to explain the physical degradation mechanisms occurred during RF life-tests by means of 2D ATLAS-SILVACO simulations. Finally, the paper demonstrates that N-LDMOS degradation is linked to hot carriers generated interface states (traps) and trapped electrons, which results in a build up of negative charge at Si/SiO2 interface. More interface states are created at low temperature due to a located maximum impact ionization rate at the gate edge. |
| Databáze: | OpenAIRE |
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