| Autor: |
G.S. Kousik, P.K. Ajmera, Z. G. Ling |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991. |
| Popis: |
The work of K.L. Luke and L.-J. Cheng (1987) is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. The authors present the analysis and discuss experimental procedures to extract the parameters. The contactless measurement technique is based on the transient behavior of infrared absorption due to the decay of optically excited excess carriers. In order to determine the surface recombination velocities at both surfaces, the experiment must be done for the two sides acting as front surfaces. An example of parameter extraction is presented. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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