Autor: |
Sumio Hosaka, Takuya Komori, Zulfakri bin Mohamad, Rosalena Irma Alip, Hui Zhang, You Yin, Miftakhul Huda |
Rok vydání: |
2013 |
Předmět: |
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Zdroj: |
Key Engineering Materials. 596:92-96 |
ISSN: |
1662-9795 |
DOI: |
10.4028/www.scientific.net/kem.596.92 |
Popis: |
In this study, we have fabricated 25-nm-pitched magnetic dot arrays using electron beam lithography (EBL), reactive ion etching (RIE) and ion-milling. We have used double mask method with calixarene resist and carbon film as a hard mask to transfer fine pattern to CoPt magnetic film. We transferred the calixarene resist dot arrays to carbon layer using O2gas in RIE as a first mask, then transferred the carbon dot arrays to CoPt magnetic layer as a second hard mask using ion-milling. We demonstrated that double mask method is very suitable to fabricate 25-nm-pitched magnetic dot arrays with a dot size of 18 nm and a height of 15 nm for patterned media with 1 Tb/in2. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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