Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode
| Autor: | Hyeokjae Lee, Ji-Min Park, Dongwoo Bae, Kiseok Kim, Jae-Young Noh, Youngboo Kim, Jisun Park, Hyungsoon Shin |
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| Rok vydání: | 2023 |
| Zdroj: | 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| DOI: | 10.1109/edtm55494.2023.10102988 |
| Databáze: | OpenAIRE |
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