Grain‐Growth Mechanisms in Polysilicon
| Autor: | Michel Rivier, Len Mei, Robert W. Dutton, Young Kwark |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Materials science
Dopant Renewable Energy Sustainability and the Environment business.industry Doping engineering.material Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Grain growth Polycrystalline silicon Transmission electron microscopy Materials Chemistry Electrochemistry engineering Optoelectronics Growth rate business Grain structure |
| Zdroj: | Journal of The Electrochemical Society. 129:1791-1795 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2124295 |
| Popis: | The electrical characteristics of polycrystalline silicon layers are closely related to their grain structure. This paper describes a comprehensive study of the grain growth of polysilicon under a wide range of doping and processing conditions. A grain‐growth model has been developed and implemented in the SUPREM process simulator, and the simulated results are compared to those obtained by transmission electron microscopy for As‐, P‐ and B‐doped polysilicon. These results indicate that n‐type dopants increase the growth rate whereas the p‐type dopant has a negligible effect. |
| Databáze: | OpenAIRE |
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