Stable high-density FD/SOI SRAM with selective back-gate bias using dual buried oxide

Autor:	Fadi H. Gebara, J.B. Kuang, Kevin J. Nowka, Ching-Te Chuang, Hung Cai Ngo, Keunwoo Kim
Rok vydání:	2008
Předmět:	Hardware_MEMORYSTRUCTURES Materials science Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering Silicon on insulator High density Hardware_PERFORMANCEANDRELIABILITY Leakage power Cache Static random-access memory Stability (probability) Dual (category theory)
Zdroj:	2008 IEEE International SOI Conference.
DOI:	10.1109/soi.2008.4656283
Popis:	The proposed selective-back gate bias technique using dual BOX improves SRAM stability, reduce leakage power, and enhances sub-array access speed while preserving overall area efficiency. TCAD simulations show that nominal Read SNM is improved by 37%, and the cell is very immune to process variations such as RDF, TSi, and TBOX. Thus, it is very suitable for high-performance on-chip cache and SOC embedded applications beyond 45 nm FD/SOI technologies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::11a70000c168408c0103f113240349ee https://doi.org/10.1109/soi.2008.4656283 Zobrazit plný text záznamu