A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C
| Autor: | M. I. Pavlyuk, A. A. Malykh, A. V. Leonov, V.N. Mordkovich |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon Field (physics) 010308 nuclear & particles physics business.industry Transistor chemistry.chemical_element 01 natural sciences law.invention Semiconductor Operating temperature chemistry law 0103 physical sciences Optoelectronics Field-effect transistor Operating temperature range Thin film business |
| Zdroj: | Technical Physics Letters. 42:71-74 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | We describe a magnetosensitive device consisting of a combination of a thin-film Si transistor with built-in conducting channel (fabricated by the silicon-on-insulator technology) and a Hall-type sensor (HS). The transistor has a double-gate field control system of the metal–insulator–semiconductor–insulator–metal type and operates in the regime of carrier accumulation in the channel at partial depletion of adjacent regions of the Si film. It is established that the device can operate at temperatures up to about 350°C, which is 160–180°C higher than the maximum operating temperature of HSs based on bulk Si crystals and comparable with HSs based on wide-bandgap semiconductors. |
| Databáze: | OpenAIRE |
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