$hbox HfO_2$ MIS Capacitor with Copper Gate Electrode
| Autor: | Ming-Jui Yang, Peer Lehnen, Tiao-Yuan Huang, Chao-Hsin Chien, Tsu-Hsiu Perng, Chun-Yen Chang, Ching-Wei Chen |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Diffusion barrier business.industry Dielectric Chemical vapor deposition Sputter deposition Capacitance MIS capacitor Electronic Optical and Magnetic Materials law.invention Atomic layer deposition Capacitor law Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 25:784-786 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2004.839221 |
| Popis: | Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO/sub 2/ dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO/sub 2/ dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (Q/sub BD/) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO/sub 2/ dielectric, Cu in contact with HfO/sub 2/ seems to be very stable. The HfO/sub 2/ capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO/sub 2/ with its considerably high density of 9.68 g/cm/sup 3/ is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes. |
| Databáze: | OpenAIRE |
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