Amphoteric properties of gold in zinc selenide

Autor:	D. D. Nedeoglo, G. N. Ivanova, V. P. Sirkeli, A. N. Avdonin, N.D. Nedeoglo
Rok vydání:	2005
Předmět:	Electron mobility Materials science Dopant Annealing (metallurgy) Doping Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Hall effect Impurity Physical chemistry Charge carrier Zinc selenide Electrical and Electronic Engineering
Zdroj:	Physica B: Condensed Matter. 365:217-224
ISSN:	0921-4526
DOI:	10.1016/j.physb.2005.05.016
Popis:	Hall effect, electric conductivity, and charge carriers mobility in n-ZnSe single crystals doped with gold during the process of a long-term high-temperature annealing in Zn+Au melt with various Au contents were investigated in the temperature range from 77 to 300 K. It has been established that, at low gold concentration, Au atoms form mainly donor-type interstitial Aui defects. The increase of Au concentration in Zn+Au melt leads to the formation of both simple AuZn defects and associative acceptors (AuZn–Aui), (AuZn–DZn), and (AuZn–VSe). These defects determine electrical properties of the crystals and they are responsible for the complex structure of excitonic and impurity radiation spectra. The influence of dopant concentration on both electrical and luminescent properties of n-ZnSe:Zn:Au crystals is investigated. The observed variations of electrical and luminescent properties are due to amphoteric properties of gold impurity in zinc selenide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::118f899e2b223641fee6e7e2e18b8b1a https://doi.org/10.1016/j.physb.2005.05.016 Zobrazit plný text záznamu Full Text from ScienceDirect