Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory

Autor:	H. Y. Cheng, W C. Chien, I. T. Kuo, C. H. Yang, Y. C. Chou, R. L. Bruce, E. K. Lai, D. Daudelin, C. W. Yeh, L. Gignac, C. W. Cheng, A. Grun, C. Lavoie, N. Gong, L. Buzi, H. Y. Ho, A. Ray, H. Utomo, M. BrightSky, H. L. Lung
Rok vydání:	2021
Zdroj:	2021 IEEE International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm19574.2021.9720704
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::117a11a9a4ee2f7b700999b05f072882 https://doi.org/10.1109/iedm19574.2021.9720704 Zobrazit plný text záznamu