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Metal oxide films have important applications in various fields, especially in the semiconductor industry. There are many ways to prepare metal oxide films, such as atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), and so on. However, the most common method to fabricate metal oxide film is sol-gel progress because it offers the easy fabrication of films or coatings of complex oxides and easy control of composition and microstructure of deposited films. In this chapter, the basic knowledge and development history of sol-gel progress will be introduced by some simple diagrams. Moreover, some typical examples of sol-gel preparation of thin films will be exhibited to help readers understand, including Al2O3, HfO2, ZnO, and TiO2. In addition, other precursors-based metal oxides inks and films will also be briefly introduced in this chapter. |
