Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
| Autor: | David Pérez, Tobias Erlbacher, Anton J. Bauer, Matthaeus Albrecht, R. Christian Martens |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Threshold voltage Mechanics of Materials 0103 physical sciences MOSFET Cmos operational amplifier Optoelectronics General Materials Science 0210 nano-technology business Communication channel |
| Zdroj: | Materials Science Forum. 1004:1123-1128 |
| ISSN: | 1662-9752 |
| Popis: | In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C. |
| Databáze: | OpenAIRE |
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