A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit

Autor:	Hideyuki Iwata, Shigeki Nakajima, Shinya Yamamoto, Akira Kanamori, Takashi Ihara, Ryuichi Minami, Takashi Ohzone, Toshihiro Matsuda
Rok vydání:	2005
Předmět:	Materials science Bandgap voltage reference Subthreshold conduction business.industry Electrical engineering Electronic Optical and Magnetic Materials Threshold voltage CMOS Saturation current MOSFET Electrical and Electronic Engineering business Voltage reference Voltage
Zdroj:	IEICE Transactions on Electronics. :1087-1093
ISSN:	1745-1353 0916-8524
DOI:	10.1093/ietele/e88-c.5.1087
Popis:	A pure CMOS threshold-voltage reference (V TR ) circuit achieves temperature (T) coefficient of 5 μV/°C (T = -60 ∼ +100°C) and supply voltage (V DD ) sensitivity of 0.1 mV/V (V DD = 3 ∼ 5V). A combination of subthreshold current, linear current and saturation current in n-MOSFETs provides a small voltage and temperature dependence. Three different regions in I-V characteristics of MOSFETs generate a constant V TR based on threshold voltage at 0 K. A feedback scheme from the reference output to gates of n-MOSFETs extremely stabilizes the output. The circuit consists of only 17 MOSFETs and its simple scheme saves the die area, which is 0.18 mm 2 in the TEG (Test Element Group) chip fabricated by 1.2 μm n-well CMOS process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1174da0e311f2e5e6868182f966012d0 https://doi.org/10.1093/ietele/e88-c.5.1087 Zobrazit plný text záznamu