| Autor: |
V A Pletnev, V N Morozov, É É Buachidze, A S Semenov, I V Vasilishcheva, P V Shapkin |
| Rok vydání: |
1985 |
| Předmět: |
|
| Zdroj: |
Soviet Journal of Quantum Electronics. 15:1201-1204 |
| ISSN: |
0049-1748 |
| DOI: |
10.1070/qe1985v015n09abeh007659 |
| Popis: |
The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A mathematical model was developed for determining the distribution of the refractive index with depth in a crystal for different diffusion regimes. A single substrate was used to form waveguides with band gaps of 2.41 and 2.47 eV. The coupling efficiency of these waveguides exceeded 90%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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