Multilevel Si doping in GaAs using a single AsCl3:SiCl4doping source

Autor:	Milton Feng, J. M. Whelan, V. K. Eu, T. Zielinski
Rok vydání:	1982
Předmět:	Materials science Silicon Inorganic chemistry Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Crystal growth Substrate (electronics) Chemical vapor deposition Partial pressure Epitaxy Volumetric flow rate chemistry
Zdroj:	Journal of Applied Physics. 53:1266-1268
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.330585
Popis:	Multilevel Si‐doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::116120829258cb1931f02e24d91b588b https://doi.org/10.1063/1.330585 Zobrazit plný text záznamu