Characterization of SiC nanowires grown by APCVD using single precursors

Autor:	Jae Woong Yang, Jae Hoon Lee, Dae Ho Rho, Jae Soo Kim, Dongjin Byun, Na Ri Kim
Rok vydání:	2004
Předmět:	Materials science Coating Chemical engineering engineering Nanowire Growth rate engineering.material Microstructure Volumetric flow rate Catalysis Characterization (materials science)
Zdroj:	MRS Proceedings. 832
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-832-f7.16
Popis:	SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10∼60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::115806e6f91d41da09fe99d7c4767fc3 https://doi.org/10.1557/proc-832-f7.16 Zobrazit plný text záznamu Full text from SpringerLink