Composite Silicide Gate Electrodes - Interconnections for VLSI Device Technologies
| Autor: | F.R. White, M.H. Ishaq, H.J. Geipel, Ning Hsieh, C.W. Koburger |
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| Rok vydání: | 1980 |
| Předmět: |
Very-large-scale integration
Materials science Passivation business.industry engineering.material chemistry.chemical_compound Tungsten disilicide Polycrystalline silicon chemistry Silicide Electrode Electronic engineering engineering Optoelectronics Polycide Electrical and Electronic Engineering business Sheet resistance |
| Zdroj: | IEEE Journal of Solid-State Circuits. 15:482-489 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.1980.1051426 |
| Popis: | A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Omega//spl square/ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of >=1.4 /spl mu/m show the polycide devices to be indistinguishable from normal polysilicon gate devices. |
| Databáze: | OpenAIRE |
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