Influence of crystallization conditions on formation of dislocation structure of germanium homoepitaxial layers produced by gas-transport technique
| Autor: | S. I. Stenin, Yu. D. Vaulin, N. N. Migal, V. P. Migal |
|---|---|
| Rok vydání: | 1973 |
| Předmět: |
Dislocation creep
Materials science Condensed matter physics chemistry.chemical_element Germanium Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Deposition temperature Condensed Matter::Materials Science Crystallography chemistry law Growth rate Dislocation Crystallization |
| Zdroj: | Physica Status Solidi (a). 15:697-710 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2210150242 |
| Popis: | The dislocation structure of Ge layers has been studied by X-ray topography. The configuration, type, and density of dislocation are found to depend on temperature and growth rate. It is suggested, that the mechanism of the dislocation generation is based on the interaction of the growth steps with local inhomogeneities on the surface. The peculiarities of the dislocation behaviour in the growing layers in dependencce on the deposition temperature are discussed. [Russian Text Ignored.] |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text